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SH8J66
Data Sheet
50
45
40
Ta=25°C
Pulsed
10000
1000
t d(off)
t f
Ta=25°C
V DD = -15V
V GS =-10V
R G =10 ?
10
8
Pulsed
35
30
I D = -9.0A
100
6
25
20
I D = -4.5A
10
4
Ta=25°C
V DD = -15V
15
t r
t d(on)
2
I D = -9.0A
R G =10 ?
Pulsed
10
1
0
0
5
10
15
0.01
0.1
1
10
0
10
20
30
40
50
60
70
GATE-SOURCE VOLTAGE : -V GS [V]
TOTAL GATE CHARGE : Qg [nC]
10000
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Ciss
1000
100
DRAIN-CURRENT : -I D [A]
Fig.11 Switching Characteristics
Operation in this area is limited by R DS(on)
(V GS =-10V)
P W =100us
Fig.12 Dynamic Input Characteristics
1000
10
Crss
P W = 10ms
100
Coss
1
P W =1ms
Ta=25°C
10
f=1MHz
V GS =0V
0.1
0.01
Ta = 25°C
Single Pulse
MOUNTED ON CERAMIC BOARD
DC operation
0.01
0.1
1
10
100
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -V DS [V]
DRAIN-SOURCE VOLTAGE : -V DS [V]
10
1
0.1
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
T a = 25°C
Single Pulse : 1Unit
Fig.14 Maximum Safe Operating Aera
0.01
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 89.3 °C/W
<Mounted on a CERAMIC board>
0.001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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c 2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.01 - Rev.A
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